Prof. Sebastian Lourdudoss is awarded IPRM
The recipient of 2017 IPRM award is decided as Prof. Sebastian Lourdudoss, KTH
Citation: "For the development of hydride vapour phase epitaxy for fabricating discrete and integrated photonic components based on buried heterostructures and heteroepitaxy of InP on Si."
Prof. Sebastian Lourdudoss at Laboratory of Semiconductor Materials, Dept. of Applied Physics will receive IPRM award for the year 2017 during Compound Semiconductor Week to be held in Berlin, Germany in May 2017. IPRM stands for Indium Phosphide and Related Materials. Instituted in 1993 originally as the prize for the best paper in the International Conference of IPRM, the criteria were revised in 1996 to recognize individuals who have made “outstanding contributions to the indium phosphide community.” The nomination committee motivates the choice of Prof. Lourdudoss for this award as: “For the development of hydride vapour phase epitaxy for fabricating discrete and integrated photonic components based on buried heterostructures and heteroepitaxy of InP on Si."
Along with his colleagues, Prof. Lourdudoss persistently developed hydride vapour phase epitaxy (HVPE) technology and demonstrated its flexibility in fabricating buried heterostructures (BHs) of different types of devices for different applications. In the initial stages, edge emitting and vertical cavity surface emitting lasers (VCSEL), and later, in collaboration with American researchers, integrated photonic circuits were demonstrated for telecom/datacom applications. More recently, his team addressed mid-infrared quantum cascade lasers in collaboration with several leading European partners in a EU project. Their long term efforts to integrate III-V semiconductors on silicon for silicon photonics have attracted international attention.