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Impact of extended defects on carrier dynamics in InGaN quantum wells revealed

Published Jan 21, 2021

December 2020

Using time-resolved scanning near-field optical microscopy (SNOM), Rinat Yapparov and Saulius Marcinkevicius, together with colleagues from university of California, Santa Barbara, have performed a study of spatial variations of carrier recombination in polar InGaN quantum wells emitting from UV to green-yellow. Such quantum wells are the basis of LEDs and laser diodes that operate in the visible spectral range. Carrier recombination and diffusion parameters were found to experience strong spatial variations determined, primarily, by the carrier localization. Contrary to the common belief, the measurements revealed a negligible role of threading dislocations on the nonradiative recombination. The work has been published in Journal of Applied Physics,

Page responsible:Max Yan
Belongs to: Photonics
Last changed: Jan 21, 2021