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First observation of ballistic hole transport in GaN

Published Jan 21, 2021

January 2020

By investigating interwell hole transport in InGaN/(In)GaN quantum wells, Saulius Marcinkevicius and Rinat Yapparov, together with their collaborators from University of California, Santa Barbara, have detected ballistic hole transport in GaN. This phenomenon has never been previously observed in this material. The investigation is published in Physical Review B,

Page responsible:Max Yan
Belongs to: Photonics
Last changed: Jan 21, 2021